1/9 february 2001 STD1LNC60 n-channel 600v - 12 w - 1a - ipak/dpak powermesh ? ii mosfet n typical r ds (on) = 12 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n batter charger, adaptor and stand- by power supply absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d STD1LNC60 600 v < 15 w 1a symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 1a i d drain current (continuos) at t c = 100 c 0.63 a i dm ( l ) drain current (pulsed) 4 a p tot total dissipation at t c =25 c 30 w derating factor 0.24 w/ c dv/dt(1) peak diode recovery voltage slope 3.5 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c (1)i sd 1a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax ipak 3 2 1 1 3 dpak to-251 to-252 internal schematic diagram
STD1LNC60 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 4.16 c/w rthj-amb thermal resistance junction-ambient max 100 c/w rthj-sink thermal resistance case-sink typ 1.5 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 40 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.5 a 12 15 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 0.5a 0.87 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 108 pf c oss output capacitance 18 pf c rss reverse transfer capacitance 2.5 pf
3/9 STD1LNC60 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300v, i d = 0.5 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 7.2 ns t r rise time 8 ns q g total gate charge v dd = 480v, i d =1a, v gs = 10v 7.3 10 nc q gs gate-source charge 3.4 nc q gd gate-drain charge 2.5 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =1a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 33 ns t f fall time 11 ns t c cross-over time 43 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 1 a i sdm (2) source-drain current (pulsed) 4 a v sd (1) forward on voltage i sd = 1 a, v gs =0 1.6 v t rr reverse recovery time i sd = 1a, di/dt = 100a/ m s, v dd = 20v, tj = 150 c (see test circuit, figure 5) 450 ns q rr reverse recovery charge 720 nc i rrm reverse recovery current 3.2 a thermal impedance safe operating area
STD1LNC60 4/9 . gate charge vs gate-source voltage capacitance variations tranconductance output characteristics transfer characteristics static drain-source on resistance
5/9 STD1LNC60 normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics
STD1LNC60 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STD1LNC60 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD1LNC60 8/9 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 13 == b3 b b6 b2 e g == == b5 2 to-251 (ipak) mechanical data 0068771-e
9/9 STD1LNC60 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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